IRFU020
MOSFET N-CH 60V 14A TO251AAManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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The Vishay Siliconix IRFU020 is an N-Channel Power MOSFET designed for robust performance in demanding applications. This device features a 60V drain-to-source voltage (Vdss) and a continuous drain current of 14A at 25°C (Tc). With a low on-resistance (Rds On) of 100mOhm at 8.4A and 10V Vgs, it minimizes conduction losses. The MOSFET exhibits a typical input capacitance (Ciss) of 640pF at 25V and a gate charge (Qg) of 25nC at 10V, facilitating efficient switching. Power dissipation capabilities are rated at 2.5W (Ta) and 42W (Tc). Packaged in a TO-251AA (IPAK) through-hole configuration, the IRFU020 is suitable for industrial and automotive power control systems. Its operating temperature range is from -55°C to 150°C (TJ) with a maximum gate-source voltage of ±20V and a threshold voltage (Vgs(th)) of 4V at 250µA.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 14A (Tc) |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 8.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 42W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-251AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 640 pF @ 25 V |
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