IRFU014
MOSFET N-CH 60V 7.7A TO251AAManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRFU014 is an N-Channel Power MOSFET designed for various applications. This component features a Drain-to-Source Voltage (Vdss) of 60V and a continuous Drain Current (Id) of 7.7A at 25°C (Tc). The ON-resistance (Rds On) is a maximum of 200mOhm at 4.6A and 10V gate drive. Key parameters include a Gate Charge (Qg) of 11 nC (Max) at 10V and Input Capacitance (Ciss) of 300 pF (Max) at 25V. Power dissipation is rated at 2.5W (Ta) and 25W (Tc). The device operates across a temperature range of -55°C to 150°C (TJ) and is housed in a TO-251AA (IPAK) package with through-hole mounting. This MOSFET is suitable for use in power supply design and general switching applications.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.7A (Tc) |
| Rds On (Max) @ Id, Vgs | 200mOhm @ 4.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 25W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-251AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 11 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 300 pF @ 25 V |
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