IRFSL9N60A
MOSFET N-CH 600V 9.2A TO262-3Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix MOSFET N-Channel IRFSL9N60A features a 600V drain-to-source voltage and 9.2A continuous drain current at 25°C (Tc). This N-Channel power MOSFET offers a maximum on-resistance of 750mOhm at 5.5A and 10V Vgs. With a gate charge of 49nC (max) at 10V and input capacitance of 1400pF (max) at 25V, it handles 170W (Tc) power dissipation. The device is housed in a TO-262-3 (I2PAK, TO-262AA) package with long leads, suitable for through-hole mounting. Operating temperature range is -55°C to 150°C (TJ). This component is utilized in industrial power supplies and motor control applications.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9.2A (Tc) |
| Rds On (Max) @ Id, Vgs | 750mOhm @ 5.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 170W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-262-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 49 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1400 pF @ 25 V |
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