IRFSL11N50A
MOSFET N-CH 500V 11A TO262-3Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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The Vishay Siliconix IRFSL11N50A is a high-performance N-Channel Power MOSFET designed for demanding applications. This through-hole component features a Drain-Source Voltage (Vdss) of 500V and a continuous Drain Current (Id) of 11A at 25°C, with a maximum power dissipation of 190W (Tc). The device boasts a low on-resistance of 550mOhm at 6.6A and 10V, facilitated by its 10V gate drive requirement. Key parameters include a typical input capacitance (Ciss) of 1426pF at 25V and a gate charge (Qg) of 51nC at 10V. The IRFSL11N50A is packaged in a TO-262-3 format, suitable for various industrial and power conversion systems. Its robust construction supports an operating temperature range from -55°C to 175°C (TJ).
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
| Rds On (Max) @ Id, Vgs | 550mOhm @ 6.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 190W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-262-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 51 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1426 pF @ 25 V |
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