IRFS9N60ATRR
MOSFET N-CH 600V 9.2A D2PAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRFS9N60ATRR is a high-performance N-Channel Power MOSFET designed for demanding applications. This component features a 600 V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) of 9.2 A at 25°C. With a maximum on-resistance of 750 mO at 5.5 A and 10 V gate-source voltage, it offers efficient power switching. The device is housed in a TO-263-3, D2PAK surface mount package, facilitating high-density board designs. Key electrical parameters include a gate charge (Qg) of 49 nC at 10 V and input capacitance (Ciss) of 1400 pF at 25 V. The MOSFET supports a maximum gate-source voltage (Vgs) of ±30 V and a threshold voltage (Vgs(th)) of 4 V. With a maximum power dissipation of 170 W, operating temperature range from -55°C to 150°C, this Vishay Siliconix MOSFET is suitable for use in power supply units, industrial motor control, and automotive electronics. The part is supplied on tape and reel for automated assembly.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9.2A (Tc) |
| Rds On (Max) @ Id, Vgs | 750mOhm @ 5.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 170W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 49 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1400 pF @ 25 V |
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