IRFS9N60A
MOSFET N-CH 600V 9.2A D2PAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix MOSFET N-Channel IRFS9N60A. This device features a 600V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 9.2A at 25°C. The Rds On is a maximum of 750mOhm at 5.5A and 10V gate-source voltage. The N-channel MOSFET is housed in a TO-263 (D2PAK) surface mount package, allowing for high power dissipation of 170W at 25°C. Key parameters include a maximum gate charge (Qg) of 49nC at 10V and input capacitance (Ciss) of 1400pF at 25V. Operating temperature range is -55°C to 150°C. This component is commonly utilized in power supply, industrial, and automotive applications.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9.2A (Tc) |
| Rds On (Max) @ Id, Vgs | 750mOhm @ 5.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 170W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 49 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1400 pF @ 25 V |
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