IRFS11N50ATRL
MOSFET N-CH 500V 11A D2PAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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The Vishay Siliconix IRFS11N50ATRL is a high-performance N-Channel Power MOSFET designed for demanding applications. This device features a 500V drain-source breakdown voltage (Vdss) and can handle a continuous drain current of 11A at 25°C (Tc), with a maximum power dissipation of 170W (Tc). The Rds(On) is specified at a maximum of 520mOhm at 6.6A and 10V gate-source voltage. Key characteristics include a gate charge (Qg) of 52 nC at 10V and an input capacitance (Ciss) of 1423 pF at 25V. The MOSFET is housed in a surface-mount TO-263-3, D2PAK package and operates within a temperature range of -55°C to 150°C. This component is suitable for use in power supply and industrial applications.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
| Rds On (Max) @ Id, Vgs | 520mOhm @ 6.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 170W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 52 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1423 pF @ 25 V |
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