IRFRC20TRL
MOSFET N-CH 600V 2A DPAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRFRC20TRL is an N-Channel Power MOSFET designed for high-voltage applications. This component features a 600V drain-to-source breakdown voltage (Vdss) and a continuous drain current (Id) of 2A at 25°C (Tc). The device offers a low on-resistance (Rds On) of 4.4 Ohms maximum at 1.2A and 10V Vgs. With a maximum power dissipation of 42W (Tc), it is suitable for demanding power conversion and control circuits. The N-Channel MOSFET technology provides efficient switching characteristics, with a typical gate charge (Qg) of 18 nC at 10V. The IRFRC20TRL is packaged in a TO-252-3, DPAK (SC-63) surface-mount package and operates across a wide temperature range of -55°C to 150°C. This component finds application in power supplies, industrial automation, and motor control systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.4Ohm @ 1.2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 42W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 350 pF @ 25 V |
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