IRFRC20TR
MOSFET N-CH 600V 2A DPAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix MOSFET N-CH 600V 2A DPAK, part number IRFRC20TR, is a surface-mount N-channel power MOSFET designed for high-voltage applications. This component features a Drain-Source Breakdown Voltage (Vdss) of 600 V and a continuous Drain Current (Id) of 2 A at 25°C (Tc). The Rds On is specified at a maximum of 4.4 Ohms at 1.2 A and 10 V gate drive. Key parameters include a Gate Charge (Qg) of 18 nC (max) at 10 V and input capacitance (Ciss) of 350 pF (max) at 25 V. Maximum power dissipation is 2.5 W (Ta) and 42 W (Tc). The device operates within a temperature range of -55°C to 150°C (TJ) and is supplied in a TO-252-3, DPAK (2 Leads + Tab), SC-63 package, delivered on tape and reel. This MOSFET is suitable for use in power supply, lighting, and industrial control applications.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.4Ohm @ 1.2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 42W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 350 pF @ 25 V |
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