IRFRC20
MOSFET N-CH 600V 2A DPAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRFRC20 is a 600V N-Channel Power MOSFET designed for surface mount applications. This device features a continuous drain current of 2A at 25°C (Tc) and a low on-resistance of 4.4 Ohm maximum at 1.2A and 10V Vgs. The drain-to-source voltage rating is 600V, with a gate-source voltage range of ±20V. Key parameters include a gate charge of 18 nC maximum at 10V and an input capacitance of 350 pF maximum at 25V. The maximum power dissipation is 2.5W (Ta) and 42W (Tc). The component is housed in a TO-252-3, DPAK (2 Leads + Tab), SC-63 package. This MOSFET is suitable for use in power supply and high voltage switching applications across various industries.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.4Ohm @ 1.2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 42W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 350 pF @ 25 V |
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