IRFR9310TRL
MOSFET P-CH 400V 1.8A DPAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix P-Channel MOSFET, part number IRFR9310TRL, offers a 400V drain-source breakdown voltage and 1.8A continuous drain current capability at 25°C case temperature. This device features a low on-resistance of 7 Ohm maximum at 1.1A and 10V Vgs, with a gate charge of 13 nC maximum at 10V Vgs. It is packaged in a TO-252-3, DPAK (2 Leads + Tab), SC-63 surface mount package, suitable for high-density applications. The maximum power dissipation is 50W at 25°C case temperature, and it operates across a temperature range of -55°C to 150°C. This component is commonly utilized in power switching, motor control, and various industrial applications.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.8A (Tc) |
| Rds On (Max) @ Id, Vgs | 7Ohm @ 1.1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 50W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 400 V |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 270 pF @ 25 V |
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