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IRFR9310TR

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IRFR9310TR

MOSFET P-CH 400V 1.8A DPAK

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix IRFR9310TR is a P-channel Power MOSFET designed for high-voltage switching applications. This component features a Drain-to-Source Voltage (Vdss) of 400V and a continuous drain current (Id) of 1.8A at 25°C (Tc). The device offers a maximum on-resistance (Rds On) of 7 Ohms at 1.1A and 10V gate drive. Its typical applications include power supply circuits, motor control, and high-voltage switching in industrial and automotive sectors. The MOSFET is packaged in a TO-252-3, DPAK (2 Leads + Tab), SC-63 surface-mount package, supplied on tape and reel (TR). Key parameters include a gate charge (Qg) of 13 nC at 10V and an input capacitance (Ciss) of 270 pF at 25V. The operating temperature range is -55°C to 150°C (TJ).

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C1.8A (Tc)
Rds On (Max) @ Id, Vgs7Ohm @ 1.1A, 10V
FET Feature-
Power Dissipation (Max)50W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageDPAK
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)400 V
Gate Charge (Qg) (Max) @ Vgs13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds270 pF @ 25 V

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