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IRFR9220TRR

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IRFR9220TRR

MOSFET P-CH 200V 3.6A DPAK

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The Vishay Siliconix IRFR9220TRR is a P-Channel Power MOSFET designed for demanding applications. It features a drain-to-source voltage (Vdss) of 200V and a continuous drain current (Id) of 3.6A at 25°C (Tc). With a maximum on-resistance (Rds On) of 1.5Ohm at 2.2A and 10V gate drive, this MOSFET offers efficient power handling. The device supports a maximum gate-source voltage (Vgs) of ±20V and exhibits a gate charge (Qg) of 20nC at 10V. Its input capacitance (Ciss) is 340pF at 25V. The IRFR9220TRR is packaged in a TO-252-3 DPAK (Surface Mount) and is supplied on tape and reel. Power dissipation is rated at 2.5W (Ta) and 42W (Tc). This component is suitable for use in industries such as industrial automation and power supply units.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C3.6A (Tc)
Rds On (Max) @ Id, Vgs1.5Ohm @ 2.2A, 10V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageDPAK
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)200 V
Gate Charge (Qg) (Max) @ Vgs20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds340 pF @ 25 V

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