IRFR9220TRL
MOSFET P-CH 200V 3.6A DPAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The Vishay Siliconix IRFR9220TRL is a P-Channel Power MOSFET designed for demanding applications. This component features a drain-source breakdown voltage (Vdss) of 200V and a continuous drain current (Id) of 3.6A at 25°C (Tc). With a maximum Rds(on) of 1.5 Ohm at 2.2A and 10V Vgs, it offers efficient power handling. The device is packaged in a TO-252-3, DPAK (SC-63) surface-mount package, supplied on tape and reel. Key electrical characteristics include an input capacitance (Ciss) of 340pF at 25V and a gate charge (Qg) of 20nC at 10V. Maximum power dissipation is rated at 2.5W (Ta) or 42W (Tc). This MOSFET is suitable for use in various industrial and high-power switching applications.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.5Ohm @ 2.2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 42W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 340 pF @ 25 V |
Request a Quote
Clients Also Buy
SIJH5700E-T1-GE3
N-CHANNEL 150 V (D-S) 175C MOSFE
SIHA14N60E-GE3
N-CHANNEL 600V
IRL540S
MOSFET N-CH 100V 28A D2PAK
