IRFR9220TR
MOSFET P-CH 200V 3.6A DPAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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The Vishay Siliconix IRFR9220TR is a P-Channel Power MOSFET designed for demanding applications. This device features a 200V drain-to-source breakdown voltage (Vdss) and a continuous drain current capability of 3.6A at 25°C (Tc). With a maximum on-resistance (Rds On) of 1.5 Ohm at 2.2A and 10V gate-source voltage (Vgs), it offers efficient switching. The device is housed in a TO-252-3, DPAK (SC-63) surface mount package, facilitating automated assembly. Key parameters include a gate charge (Qg) of 20 nC at 10V and input capacitance (Ciss) of 340 pF at 25V. Power dissipation is rated at 2.5W (Ta) and 42W (Tc). This MOSFET is suitable for use in power supplies, motor control, and industrial automation.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.5Ohm @ 2.2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 42W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 340 pF @ 25 V |
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