IRFR9220
MOSFET P-CH 200V 3.6A DPAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix P-Channel Power MOSFET, IRFR9220, offers a 200V Drain-Source voltage and 3.6A continuous drain current at 25°C (Tc). This surface mount device in a TO-252-3, DPAK package features a maximum On-Resistance of 1.5 Ohms at 2.2A and 10V gate drive. With a typical gate charge of 20 nC at 10V and input capacitance of 340 pF at 25V, this MOSFET is designed for efficient power switching. The device supports a maximum gate-source voltage of ±20V and a threshold voltage of 4V at 250µA. Power dissipation is rated at 42W (Tc) and 2.5W (Ta). This component is suitable for applications in industrial and automotive power management.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.5Ohm @ 2.2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 42W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 340 pF @ 25 V |
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