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IRFR9214TR

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IRFR9214TR

MOSFET P-CH 250V 2.7A DPAK

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix IRFR9214TR is a P-Channel Power MOSFET designed for demanding applications. This device features a Drain-Source Voltage (Vdss) of 250V and a continuous drain current (Id) of 2.7A at 25°C (Tc). The Rds(On) is specified at a maximum of 3 Ohms when driven at 10V with a drain current of 1.7A. With a maximum power dissipation of 50W (Tc), this MOSFET is suitable for high-power switching and control circuits. The device is packaged in a DPAK (TO-252-3, DPAK (2 Leads + Tab), SC-63) for surface mounting and is supplied on tape and reel (TR). Key parameters include a Gate Charge (Qg) of 14 nC at 10V and input capacitance (Ciss) of 220 pF at 25V. It operates within a temperature range of -55°C to 150°C. This component finds application in industrial automation, power supplies, and automotive systems.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C2.7A (Tc)
Rds On (Max) @ Id, Vgs3Ohm @ 1.7A, 10V
FET Feature-
Power Dissipation (Max)50W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageDPAK
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)250 V
Gate Charge (Qg) (Max) @ Vgs14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds220 pF @ 25 V

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