IRFR9210
MOSFET P-CH 200V 1.9A DPAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The Vishay Siliconix IRFR9210 is a P-Channel Power MOSFET designed for demanding applications. This component features a drain-source breakdown voltage (Vdss) of 200 V and a continuous drain current (Id) of 1.9 A at 25°C (Tc). With a maximum Rds(on) of 3 Ohm at 1.1 A and 10 V gate drive, it offers efficient switching characteristics. The device is housed in a TO-252-3, DPAK (SC-63) surface-mount package, enabling robust thermal management with a power dissipation of 25 W at 25°C (Tc). Key parameters include a gate charge (Qg) of 8.9 nC (max) at 10 V and an input capacitance (Ciss) of 170 pF (max) at 25 V. It operates reliably across a wide temperature range of -55°C to 150°C (TJ) and supports a maximum gate-source voltage (Vgs) of ±20 V. This MOSFET is suitable for use in power supply, motor control, and lighting applications.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.9A (Tc) |
| Rds On (Max) @ Id, Vgs | 3Ohm @ 1.1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 25W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 8.9 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 170 pF @ 25 V |
Request a Quote
Clients Also Buy
SI2333DDS-T1-GE3
MOSFET P-CH 12V 6A SOT23-3
SUP90330E-GE3
MOSFET N-CH 200V 35.8A TO220AB
SQJ443EP-T1_BE3
P-CHANNEL 40-V (D-S) 175C MOSFET
