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IRFR9210

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IRFR9210

MOSFET P-CH 200V 1.9A DPAK

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The Vishay Siliconix IRFR9210 is a P-Channel Power MOSFET designed for demanding applications. This component features a drain-source breakdown voltage (Vdss) of 200 V and a continuous drain current (Id) of 1.9 A at 25°C (Tc). With a maximum Rds(on) of 3 Ohm at 1.1 A and 10 V gate drive, it offers efficient switching characteristics. The device is housed in a TO-252-3, DPAK (SC-63) surface-mount package, enabling robust thermal management with a power dissipation of 25 W at 25°C (Tc). Key parameters include a gate charge (Qg) of 8.9 nC (max) at 10 V and an input capacitance (Ciss) of 170 pF (max) at 25 V. It operates reliably across a wide temperature range of -55°C to 150°C (TJ) and supports a maximum gate-source voltage (Vgs) of ±20 V. This MOSFET is suitable for use in power supply, motor control, and lighting applications.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C1.9A (Tc)
Rds On (Max) @ Id, Vgs3Ohm @ 1.1A, 10V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageDPAK
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)200 V
Gate Charge (Qg) (Max) @ Vgs8.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds170 pF @ 25 V

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