IRFR9120TRL
MOSFET P-CH 100V 5.6A DPAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix IRFR9120TRL is a P-Channel Power MOSFET designed for demanding applications. This device features a Drain-to-Source Voltage (Vdss) of 100V and a continuous drain current (Id) of 5.6A at 25°C (Tc). With a low on-resistance (Rds On) of 600mOhm maximum at 3.4A and 10V Vgs, it offers efficient power switching. The MOSFET is housed in a TO-252-3, DPAK package for surface mounting, enabling high power density. Key parameters include a Gate Charge (Qg) of 18 nC maximum at 10V Vgs and an Input Capacitance (Ciss) of 390 pF maximum at 25V Vds. Power dissipation is rated at 42W (Tc) or 2.5W (Ta). This component is suitable for use in industrial, automotive, and power management systems. The operating temperature range is -55°C to 150°C (TJ). The device is supplied on tape and reel.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 600mOhm @ 3.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 42W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 390 pF @ 25 V |
Request a Quote
Clients Also Buy
SIJH5700E-T1-GE3
N-CHANNEL 150 V (D-S) 175C MOSFE
SIHA14N60E-GE3
N-CHANNEL 600V
IRL540S
MOSFET N-CH 100V 28A D2PAK
