IRFR9120TR
MOSFET P-CH 100V 5.6A DPAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix P-Channel Power MOSFET, part number IRFR9120TR, is designed for demanding applications requiring efficient power switching. This device features a 100V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 5.6A at 25°C (Tc). The low on-resistance of 600mOhm at 3.4A and 10V gate drive ensures minimal conduction losses. With a maximum gate charge of 18nC at 10V and input capacitance of 390pF at 25V, it facilitates fast switching speeds. The IRFR9120TR is housed in a TO-252-3, DPAK (2 Leads + Tab), SC-63 surface mount package, offering excellent thermal performance with a power dissipation of 42W at 25°C (Tc). Operating temperature ranges from -55°C to 150°C (TJ). This component is commonly utilized in industrial automation, automotive systems, and power supply designs.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 600mOhm @ 3.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 42W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 390 pF @ 25 V |
Request a Quote
Clients Also Buy
SIJH5700E-T1-GE3
N-CHANNEL 150 V (D-S) 175C MOSFE
SIHA14N60E-GE3
N-CHANNEL 600V
IRL540S
MOSFET N-CH 100V 28A D2PAK
