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IRFR9024TRR

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IRFR9024TRR

MOSFET P-CH 60V 8.8A DPAK

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix IRFR9024TRR is a P-channel MOSFET designed for efficient power switching applications. This component features a Drain-to-Source Voltage (Vdss) of 60V and a continuous Drain Current (Id) of 8.8A at 25°C (Tc). With a maximum On-Resistance (Rds On) of 280mOhm at 5.3A and 10V, it offers low conduction losses. The device is housed in a TO-252-3, DPAK (2 Leads + Tab), SC-63 surface-mount package, suitable for automated assembly. Key parameters include a Gate Charge (Qg) of 19nC at 10V and an Input Capacitance (Ciss) of 570pF at 25V. Power dissipation is rated at 2.5W (Ta) and 42W (Tc). The operating temperature range is -55°C to 150°C. This MOSFET finds application in industries such as automotive, industrial power control, and consumer electronics.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C8.8A (Tc)
Rds On (Max) @ Id, Vgs280mOhm @ 5.3A, 10V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageDPAK
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds570 pF @ 25 V

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