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IRFR9024TRL

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IRFR9024TRL

MOSFET P-CH 60V 8.8A DPAK

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix IRFR9024TRL is a P-Channel Power MOSFET designed for efficient power management. This component offers a 60V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 8.8A at 25°C (Tc). With a low on-resistance (Rds On) of 280mOhm maximum at 5.3A and 10V gate-source voltage (Vgs), it minimizes conduction losses. The device features a gate charge (Qg) of 19 nC maximum at 10V and input capacitance (Ciss) of 570 pF maximum at 25V, facilitating faster switching speeds. Power dissipation is rated at 42W (Tc) and 2.5W (Ta). The IRFR9024TRL is housed in a TO-252-3, DPAK (SC-63) surface mount package, suitable for high-density board designs. Operating temperature ranges from -55°C to 150°C. This MOSFET is utilized in various applications including power supplies, motor control, and battery management systems.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C8.8A (Tc)
Rds On (Max) @ Id, Vgs280mOhm @ 5.3A, 10V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageDPAK
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds570 pF @ 25 V

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