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IRFR9024

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IRFR9024

MOSFET P-CH 60V 8.8A DPAK

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix P-Channel MOSFET, part number IRFR9024. This device offers a 60V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 8.8A at 25°C. Featuring a low on-resistance (Rds On) of 280mOhm maximum at 5.3A and 10V gate-source voltage, it is designed for efficient power handling. The IRFR9024 utilizes MOSFET technology and is packaged in a TO-252-3, DPAK (2 Leads + Tab), SC-63 for surface mounting. Key parameters include a gate charge (Qg) of 19 nC max at 10V and input capacitance (Ciss) of 570 pF max at 25V. Maximum power dissipation is rated at 2.5W (Ta) and 42W (Tc). This component is suitable for applications in industrial and automotive sectors.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C8.8A (Tc)
Rds On (Max) @ Id, Vgs280mOhm @ 5.3A, 10V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageDPAK
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds570 pF @ 25 V

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