IRFR9020
MOSFET P-CH 50V 9.9A DPAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix MOSFET P-Channel, part number IRFR9020, is a robust device designed for demanding applications. This P-Channel MOSFET features a Drain-to-Source Voltage (Vdss) of 50 V and a continuous Drain Current (Id) of 9.9 A at 25°C, with a maximum power dissipation of 42 W (Tc). The Rds On (Max) is specified at 280 mOhm at 5.7 A and 10 V gate drive. Key parameters include a Gate Charge (Qg) of 14 nC (Max) at 10 V and an Input Capacitance (Ciss) of 490 pF (Max) at 25 V. Operating across a wide temperature range from -55°C to 150°C (TJ), the IRFR9020 is housed in a TO-252-3, DPAK (2 Leads + Tab), SC-63 surface-mount package. This component is suitable for use in power management and switching applications across various industrial sectors.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9.9A (Tc) |
| Rds On (Max) @ Id, Vgs | 280mOhm @ 5.7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 42W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 50 V |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 490 pF @ 25 V |
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