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IRFR9020

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IRFR9020

MOSFET P-CH 50V 9.9A DPAK

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix MOSFET P-Channel, part number IRFR9020, is a robust device designed for demanding applications. This P-Channel MOSFET features a Drain-to-Source Voltage (Vdss) of 50 V and a continuous Drain Current (Id) of 9.9 A at 25°C, with a maximum power dissipation of 42 W (Tc). The Rds On (Max) is specified at 280 mOhm at 5.7 A and 10 V gate drive. Key parameters include a Gate Charge (Qg) of 14 nC (Max) at 10 V and an Input Capacitance (Ciss) of 490 pF (Max) at 25 V. Operating across a wide temperature range from -55°C to 150°C (TJ), the IRFR9020 is housed in a TO-252-3, DPAK (2 Leads + Tab), SC-63 surface-mount package. This component is suitable for use in power management and switching applications across various industrial sectors.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C9.9A (Tc)
Rds On (Max) @ Id, Vgs280mOhm @ 5.7A, 10V
FET Feature-
Power Dissipation (Max)42W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageDPAK
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)50 V
Gate Charge (Qg) (Max) @ Vgs14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds490 pF @ 25 V

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