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IRFR9014TR

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IRFR9014TR

MOSFET P-CH 60V 5.1A DPAK

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix IRFR9014TR is a P-Channel Power MOSFET designed for efficient power switching applications. This device features a Drain-to-Source Voltage (Vdss) of 60V and a continuous Drain Current (Id) of 5.1A at 25°C (Tc). The Rds(On) is specified at a maximum of 500mOhm at 3.1A and 10V gate drive. With a maximum gate-source voltage (Vgs) of ±20V and a threshold voltage (Vgs(th)) of 4V at 250µA, it offers robust control characteristics. The component boasts a gate charge (Qg) of 12 nC at 10V and an input capacitance (Ciss) of 270 pF at 25V. It is packaged in a TO-252-3, DPAK (SC-63) for surface mounting and is supplied on a tape and reel. Power dissipation is rated at 2.5W (Ta) and 25W (Tc), with an operating temperature range of -55°C to 150°C (TJ). This MOSFET is suitable for use in industrial automation, automotive, and power management systems.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C5.1A (Tc)
Rds On (Max) @ Id, Vgs500mOhm @ 3.1A, 10V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageDPAK
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds270 pF @ 25 V

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