IRFR9014
MOSFET P-CH 60V 5.1A DPAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRFR9014 is a P-Channel Power MOSFET designed for high-efficiency switching applications. This device features a 60V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) of 5.1A at 25°C (Tc). The IRFR9014 exhibits a maximum on-resistance (Rds On) of 500mOhm at 3.1A and 10V gate-source voltage (Vgs). With a gate charge (Qg) of 12 nC at 10V Vgs and input capacitance (Ciss) of 270 pF at 25V Vds, this MOSFET is suitable for demanding power management tasks. Its DPAK (TO-252-3) surface-mount package offers excellent thermal performance, with a maximum power dissipation of 25W at 25°C (Tc). The operating temperature range is -55°C to 150°C (TJ). This component is commonly utilized in industrial, automotive, and consumer electronics power control circuits.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.1A (Tc) |
| Rds On (Max) @ Id, Vgs | 500mOhm @ 3.1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 25W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 270 pF @ 25 V |
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