IRFR9010
MOSFET P-CH 50V 5.3A DPAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRFR9010 is a P-Channel MOSFET designed for efficient power switching applications. This device features a Drain-Source Voltage (Vdss) of 50V and a continuous Drain Current (Id) of 5.3A at 25°C, with a maximum power dissipation of 25W (Tc). The Rds On is specified at 500mOhm maximum at 2.8A and 10V gate drive. Key parameters include a Gate Charge (Qg) of 9.1 nC max at 10V and an input capacitance (Ciss) of 240 pF max at 25V. The IRFR9010 is housed in a TO-252-3, DPAK (2 Leads + Tab), SC-63 surface mount package, suitable for operation across a wide temperature range of -55°C to 150°C (TJ). This component is commonly employed in industrial, automotive, and consumer electronics power management circuits.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.3A (Tc) |
| Rds On (Max) @ Id, Vgs | 500mOhm @ 2.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 25W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 50 V |
| Gate Charge (Qg) (Max) @ Vgs | 9.1 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 240 pF @ 25 V |
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