IRFR430ATRRPBF
MOSFET N-CH 500V 5A DPAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRFR430ATRRPBF is a 500V N-Channel Power MOSFET designed for high-efficiency switching applications. This device features a continuous drain current (Id) of 5A at 25°C (Tc) and a maximum power dissipation of 110W (Tc). The Rds(on) is specified at 1.7 Ohm maximum for a gate-source voltage (Vgs) of 10V and a drain current (Id) of 3A. Key parameters include a Vgs(th) of 4.5V maximum at 250µA, and a gate charge (Qg) of 24 nC maximum at 10V. Input capacitance (Ciss) is 490 pF maximum at 25V. The Vishay Siliconix IRFR430ATRRPBF utilizes a DPAK (TO-252-3, DPAK) surface mount package and operates across a temperature range of -55°C to 150°C (TJ). This MOSFET is commonly employed in power supply units, motor control, and industrial automation. The component is supplied in a Tape & Reel (TR) configuration.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.7Ohm @ 3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 110W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 24 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 490 pF @ 25 V |
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