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IRFR420TR

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IRFR420TR

MOSFET N-CH 500V 2.4A DPAK

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix's IRFR420TR is a surface-mount N-channel MOSFET designed for applications requiring high voltage switching. This component offers a drain-source voltage (Vdss) of 500V and a continuous drain current (Id) of 2.4A at 25°C (Tc). The device features a low on-resistance (Rds On) of 3 Ohm maximum at 1.4A and 10V gate drive. With a gate charge (Qg) of 19 nC maximum at 10V and input capacitance (Ciss) of 360 pF maximum at 25V, it is suitable for efficient power conversion. The DPAK (TO-252-3) package enables robust thermal performance with a power dissipation of 42W at 25°C (Tc). Operating temperature range is -55°C to 150°C (TJ). This MOSFET is commonly utilized in power supply units, industrial motor control, and lighting applications. The part is supplied on a tape and reel (TR) for automated assembly.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C2.4A (Tc)
Rds On (Max) @ Id, Vgs3Ohm @ 1.4A, 10V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageDPAK
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)500 V
Gate Charge (Qg) (Max) @ Vgs19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds360 pF @ 25 V

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