IRFR320TRL
MOSFET N-CH 400V 3.1A DPAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix IRFR320TRL is a high-performance N-Channel Power MOSFET designed for demanding applications. This device features a 400V Drain-Source Voltage (Vdss) and a continuous drain current capability of 3.1A at 25°C (Tc). With a low on-resistance of 1.8 Ohms maximum at 1.9A and 10V Vgs, it minimizes conduction losses. The MOSFET offers a gate charge of 20 nC maximum at 10V and an input capacitance of 350 pF maximum at 25V. It is packaged in a TO-252-3, DPAK (2 Leads + Tab), SC-63 surface-mount package, supplied on tape and reel. The maximum power dissipation is rated at 2.5W (Ta) and 42W (Tc). This component is suitable for power supply, industrial, and automotive sectors, operating across a temperature range of -55°C to 150°C.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.1A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.8Ohm @ 1.9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 42W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 400 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 350 pF @ 25 V |
Request a Quote
Clients Also Buy
IRF820APBF-BE3
MOSFET N-CH 500V 2.5A TO220AB
SIJH5700E-T1-GE3
N-CHANNEL 150 V (D-S) 175C MOSFE
SI3442CDV-T1-GE3
MOSFET N-CH 20V 8A 6TSOP
