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IRFR320TR

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IRFR320TR

MOSFET N-CH 400V 3.1A DPAK

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The Vishay Siliconix IRFR320TR is an N-Channel Power MOSFET designed for high-voltage switching applications. This component features a drain-source voltage (Vdss) of 400V and a continuous drain current (Id) of 3.1A at 25°C (Tc). With a maximum on-resistance (Rds On) of 1.8 Ohm at 1.9A and 10V gate-source voltage, it offers efficient power handling. The device has a gate charge (Qg) of 20 nC at 10V and input capacitance (Ciss) of 350 pF at 25V. Dissipation is rated at 42W (Tc) and 2.5W (Ta). The IRFR320TR is supplied in a TO-252-3, DPAK package for surface mounting and is available on tape and reel. This component is suitable for use in power supply, industrial automation, and lighting control systems.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C3.1A (Tc)
Rds On (Max) @ Id, Vgs1.8Ohm @ 1.9A, 10V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageDPAK
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)400 V
Gate Charge (Qg) (Max) @ Vgs20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds350 pF @ 25 V

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