IRFR320
MOSFET N-CH 400V 3.1A DPAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix MOSFET N-Channel IRFR320. This device features a 400V drain-source breakdown voltage and a continuous drain current of 3.1A at 25°C (Tc). The Rds(on) is specified at a maximum of 1.8 Ohms at 1.9A and 10V gate-source voltage. Key parameters include a gate charge (Qg) of 20 nC (max) at 10V and input capacitance (Ciss) of 350 pF (max) at 25V. With a maximum power dissipation of 42W (Tc) and 2.5W (Ta), this MOSFET is housed in a TO-252-3, DPAK (2 Leads + Tab), SC-63 package for surface mounting. Operating temperature range is -55°C to 150°C (TJ). The IRFR320 is utilized in power supply and motor control applications.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.1A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.8Ohm @ 1.9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 42W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 400 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 350 pF @ 25 V |
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