IRFR310TRRPBF
MOSFET N-CH 400V 1.7A DPAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRFR310TRRPBF is an N-Channel Power MOSFET designed for high-voltage applications. This component features a drain-to-source voltage (Vdss) of 400V and a continuous drain current (Id) of 1.7A at 25°C (Tc). The device offers a low on-resistance (Rds On) of 3.6 Ohms maximum at 1A, 10V gate drive. With a gate charge (Qg) of 12 nC maximum at 10V and input capacitance (Ciss) of 170 pF maximum at 25V, it is suitable for power switching applications. The MOSFET supports a gate-source voltage (Vgs) up to ±20V and a threshold voltage (Vgs(th)) of 4V maximum at 250µA. Power dissipation is rated at 2.5W (Ta) and 25W (Tc). This device is housed in a TO-252-3, DPAK (2 Leads + Tab), SC-63 surface-mount package and is supplied on tape and reel. Typical applications include power supplies, lighting, and industrial motor control.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.7A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.6Ohm @ 1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 25W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 400 V |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 170 pF @ 25 V |
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