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IRFR310TRL

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IRFR310TRL

MOSFET N-CH 400V 1.7A DPAK

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix's IRFR310TRL is an N-Channel Power MOSFET designed for high-voltage applications. This component features a drain-source voltage (Vdss) of 400V and a continuous drain current (Id) of 1.7A at 25°C (Tc). With a maximum on-resistance (Rds On) of 3.6 Ohm at 1A and 10V gate-source voltage, it offers efficient switching characteristics. The device supports a gate drive voltage of 10V for optimal Rds On performance. Key electrical parameters include a gate charge (Qg) of 12 nC (max) at 10V and input capacitance (Ciss) of 170 pF (max) at 25V. The IRFR310TRL is housed in a TO-252-3, DPAK (2 Leads + Tab), SC-63 surface-mount package, suitable for automated assembly. It is rated for a maximum power dissipation of 2.5W (Ta) and 25W (Tc), with an operating temperature range of -55°C to 150°C. This MOSFET finds application in power supply units, lighting controls, and motor drive circuits.

Additional Information

Series: -RoHS Status: RoHS Compliant By ExemptionManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C1.7A (Tc)
Rds On (Max) @ Id, Vgs3.6Ohm @ 1A, 10V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageDPAK
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)400 V
Gate Charge (Qg) (Max) @ Vgs12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds170 pF @ 25 V

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