IRFR310TR
MOSFET N-CH 400V 1.7A DPAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix IRFR310TR is an N-Channel Power MOSFET designed for high-voltage applications. This component offers a Drain-Source Voltage (Vdss) of 400V and a continuous Drain Current (Id) of 1.7A at 25°C (Tc). With a low on-resistance of 3.6 Ohms maximum at 1A and 10V (Vgs), it achieves efficient power handling. The device features low gate charge (Qg) of 12 nC maximum at 10V and input capacitance (Ciss) of 170 pF maximum at 25V. It supports gate-source voltages up to ±20V and has a threshold voltage (Vgs(th)) of 4V maximum at 250µA. Power dissipation is rated at 2.5W (Ta) and 25W (Tc). The IRFR310TR is housed in a TO-252-3, DPAK (2 Leads + Tab), SC-63 surface-mount package, supplied on tape and reel. This MOSFET is suitable for use in power supply, lighting, and industrial control applications.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.7A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.6Ohm @ 1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 25W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 400 V |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 170 pF @ 25 V |
Request a Quote
Clients Also Buy
SI2333DDS-T1-GE3
MOSFET P-CH 12V 6A SOT23-3
SQJ443EP-T1_BE3
P-CHANNEL 40-V (D-S) 175C MOSFET
SQA444CEJW-T1_GE3
AUTOMOTIVE N-CHANNEL 60 V (D-S)
