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IRFR310TR

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IRFR310TR

MOSFET N-CH 400V 1.7A DPAK

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix IRFR310TR is an N-Channel Power MOSFET designed for high-voltage applications. This component offers a Drain-Source Voltage (Vdss) of 400V and a continuous Drain Current (Id) of 1.7A at 25°C (Tc). With a low on-resistance of 3.6 Ohms maximum at 1A and 10V (Vgs), it achieves efficient power handling. The device features low gate charge (Qg) of 12 nC maximum at 10V and input capacitance (Ciss) of 170 pF maximum at 25V. It supports gate-source voltages up to ±20V and has a threshold voltage (Vgs(th)) of 4V maximum at 250µA. Power dissipation is rated at 2.5W (Ta) and 25W (Tc). The IRFR310TR is housed in a TO-252-3, DPAK (2 Leads + Tab), SC-63 surface-mount package, supplied on tape and reel. This MOSFET is suitable for use in power supply, lighting, and industrial control applications.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C1.7A (Tc)
Rds On (Max) @ Id, Vgs3.6Ohm @ 1A, 10V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageDPAK
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)400 V
Gate Charge (Qg) (Max) @ Vgs12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds170 pF @ 25 V

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