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IRFR224TRPBF

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IRFR224TRPBF

MOSFET N-CH 250V 3.8A DPAK

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix IRFR224TRPBF is an N-Channel power MOSFET designed for demanding applications. This component features a 250V drain-source breakdown voltage (Vdss) and a continuous drain current capability of 3.8A at 25°C (Tc). The device offers a low on-resistance (Rds On) of 1.1 Ohm maximum at 2.3A, 10V Vgs, ensuring efficient power transfer. With a gate charge (Qg) of 14 nC maximum at 10V Vgs and input capacitance (Ciss) of 260 pF maximum at 25V Vds, it is suitable for various switching applications. The power dissipation is rated at 2.5W (Ta) and 42W (Tc). The IRFR224TRPBF is packaged in a TO-252-3, DPAK (2 Leads + Tab), SC-63 for surface mounting and supplied on tape and reel. This component finds utility in industrial, automotive, and power supply sectors.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C3.8A (Tc)
Rds On (Max) @ Id, Vgs1.1Ohm @ 2.3A, 10V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageDPAK
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)250 V
Gate Charge (Qg) (Max) @ Vgs14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds260 pF @ 25 V

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