IRFR224TRPBF
MOSFET N-CH 250V 3.8A DPAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRFR224TRPBF is an N-Channel power MOSFET designed for demanding applications. This component features a 250V drain-source breakdown voltage (Vdss) and a continuous drain current capability of 3.8A at 25°C (Tc). The device offers a low on-resistance (Rds On) of 1.1 Ohm maximum at 2.3A, 10V Vgs, ensuring efficient power transfer. With a gate charge (Qg) of 14 nC maximum at 10V Vgs and input capacitance (Ciss) of 260 pF maximum at 25V Vds, it is suitable for various switching applications. The power dissipation is rated at 2.5W (Ta) and 42W (Tc). The IRFR224TRPBF is packaged in a TO-252-3, DPAK (2 Leads + Tab), SC-63 for surface mounting and supplied on tape and reel. This component finds utility in industrial, automotive, and power supply sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.8A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.1Ohm @ 2.3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 42W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 260 pF @ 25 V |
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