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IRFR224TRLPBF

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IRFR224TRLPBF

MOSFET N-CH 250V 3.8A DPAK

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix IRFR224TRLPBF is an N-Channel Power MOSFET designed for efficient switching applications. This component features a 250V drain-source breakdown voltage (Vdss) and a continuous drain current capability of 3.8A at 25°C (Tc). With a low on-resistance of 1.1 Ohm maximum at 2.3A and 10V Vgs, it minimizes conduction losses. The device offers a gate charge of 14 nC maximum at 10V and input capacitance of 260 pF maximum at 25V. Rated for a maximum power dissipation of 42W at 25°C (Tc), and 2.5W at 25°C (Ta), it is suitable for operation across a wide temperature range of -55°C to 150°C. The TO-252-3, DPAK package facilitates surface mounting, making it ideal for power management solutions in industrial, automotive, and consumer electronics sectors. This component is supplied in a Tape & Reel (TR) package.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C3.8A (Tc)
Rds On (Max) @ Id, Vgs1.1Ohm @ 2.3A, 10V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageDPAK
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)250 V
Gate Charge (Qg) (Max) @ Vgs14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds260 pF @ 25 V

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