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IRFR224TRL

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IRFR224TRL

MOSFET N-CH 250V 3.8A DPAK

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix IRFR224TRL is an N-Channel Power MOSFET designed for high-efficiency switching applications. This component features a drain-to-source voltage (Vdss) of 250V and a continuous drain current (Id) of 3.8A at 25°C (Tc). The device offers a maximum on-resistance (Rds On) of 1.1 Ohm at 2.3A and 10V gate-source voltage. Key parameters include a gate charge (Qg) of 14 nC at 10V and input capacitance (Ciss) of 260 pF at 25V. The IRFR224TRL is housed in a TO-252-3, DPAK (2 Leads + Tab), SC-63 surface mount package, suitable for thermal management with a power dissipation of 42W at 25°C (Tc). Operating temperature ranges from -55°C to 150°C (TJ). This MOSFET finds application in industrial power supplies, lighting, and automotive systems requiring robust power handling.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C3.8A (Tc)
Rds On (Max) @ Id, Vgs1.1Ohm @ 2.3A, 10V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageDPAK
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)250 V
Gate Charge (Qg) (Max) @ Vgs14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds260 pF @ 25 V

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