IRFR224TR
MOSFET N-CH 250V 3.8A DPAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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The Vishay Siliconix IRFR224TR is an N-Channel Power MOSFET designed for high-efficiency switching applications. This component features a Drain-to-Source voltage (Vds) of 250V and a continuous Drain current (Id) rating of 3.8A at 25°C (Tc). The Rds(On) is specified at a maximum of 1.1 Ohms at 2.3A and 10V gate drive. With a gate charge (Qg) of 14 nC at 10V and input capacitance (Ciss) of 260 pF at 25V, it is optimized for fast switching. The device offers a maximum power dissipation of 42W (Tc) and 2.5W (Ta) and operates within a temperature range of -55°C to 150°C. Packaged in a TO-252-3, DPAK (Surface Mount) and supplied on tape and reel, this MOSFET is suitable for use in power supplies, motor control, and industrial automation.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.8A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.1Ohm @ 2.3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 42W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 260 pF @ 25 V |
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