IRFR224PBF
MOSFET N-CH 250V 3.8A DPAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix MOSFET N-Channel IRFR224PBF, a 250V device with a continuous drain current of 3.8A at 25°C (Tc). This N-Channel MOSFET features a low Rds(on) of 1.1 Ohm maximum at 2.3A, 10V, and a gate charge of 14 nC maximum at 10V. The input capacitance (Ciss) is 260 pF maximum at 25V. Rated for a maximum power dissipation of 42W (Tc) and 2.5W (Ta), it operates within a temperature range of -55°C to 150°C (TJ). The component is housed in a TO-252-3, DPAK (2 Leads + Tab), SC-63 package for surface mounting. This Vishay Siliconix part is utilized in power supply applications and general switching.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: Last Time BuyPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.8A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.1Ohm @ 2.3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 42W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 260 pF @ 25 V |
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