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IRFR224

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IRFR224

MOSFET N-CH 250V 3.8A DPAK

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix IRFR224 is an N-channel Power MOSFET designed for high-efficiency switching applications. This device features a maximum drain-source voltage (Vdss) of 250V and a continuous drain current (Id) of 3.8A at 25°C (Tc). The IRFR224 offers a low on-resistance (Rds On) of 1.1 Ohm maximum at 2.3A and 10V gate-source voltage (Vgs). With a gate charge (Qg) of 14 nC maximum at 10V and input capacitance (Ciss) of 260 pF maximum at 25V, it is suitable for various power management tasks. The component dissipates up to 42W (Tc) and 2.5W (Ta) and operates within a temperature range of -55°C to 150°C. Packaged in a TO-252-3, DPAK (Surface Mount) configuration, the IRFR224 is commonly utilized in industrial, automotive, and consumer electronics power control systems.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C3.8A (Tc)
Rds On (Max) @ Id, Vgs1.1Ohm @ 2.3A, 10V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageDPAK
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)250 V
Gate Charge (Qg) (Max) @ Vgs14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds260 pF @ 25 V

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