IRFR224
MOSFET N-CH 250V 3.8A DPAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix IRFR224 is an N-channel Power MOSFET designed for high-efficiency switching applications. This device features a maximum drain-source voltage (Vdss) of 250V and a continuous drain current (Id) of 3.8A at 25°C (Tc). The IRFR224 offers a low on-resistance (Rds On) of 1.1 Ohm maximum at 2.3A and 10V gate-source voltage (Vgs). With a gate charge (Qg) of 14 nC maximum at 10V and input capacitance (Ciss) of 260 pF maximum at 25V, it is suitable for various power management tasks. The component dissipates up to 42W (Tc) and 2.5W (Ta) and operates within a temperature range of -55°C to 150°C. Packaged in a TO-252-3, DPAK (Surface Mount) configuration, the IRFR224 is commonly utilized in industrial, automotive, and consumer electronics power control systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.8A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.1Ohm @ 2.3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 42W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 260 pF @ 25 V |
Request a Quote
Clients Also Buy
SIJH5700E-T1-GE3
N-CHANNEL 150 V (D-S) 175C MOSFE
SIHA14N60E-GE3
N-CHANNEL 600V
IRL540S
MOSFET N-CH 100V 28A D2PAK
