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IRFR214TRRPBF

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IRFR214TRRPBF

MOSFET N-CH 250V 2.2A DPAK

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix IRFR214TRRPBF is an N-Channel Power MOSFET designed for applications requiring high voltage and moderate current. This component features a Drain-to-Source Voltage (Vdss) of 250V and a continuous drain current (Id) of 2.2A at 25°C (Tc). The Rds On is specified at a maximum of 2 Ohms when driven at 10V with a drain current of 1.3A. The device offers a maximum power dissipation of 2.5W (Ta) and 25W (Tc). Key electrical characteristics include a gate charge (Qg) of 8.2 nC (max) at 10V and input capacitance (Ciss) of 140 pF (max) at 25V. The operating temperature range is -55°C to 150°C. The IRFR214TRRPBF is supplied in a TO-252-3, DPAK (2 Leads + Tab), SC-63 package, suitable for surface mounting and delivered on tape and reel. This component is commonly utilized in power supply, motor control, and automotive systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C2.2A (Tc)
Rds On (Max) @ Id, Vgs2Ohm @ 1.3A, 10V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageDPAK
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)250 V
Gate Charge (Qg) (Max) @ Vgs8.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds140 pF @ 25 V

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