IRFR214TRPBF-BE3
N-CHANNEL 250VManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix IRFR214TRPBF-BE3 is an N-Channel Power MOSFET designed for high-efficiency switching applications. This component features a Drain-Source Voltage (Vdss) of 250V and a continuous drain current (Id) of 2.2A at 25°C (Tc). The low on-resistance (Rds On), specified as 2 Ohm maximum at 1.3A and 10V gate drive, minimizes conduction losses. With a maximum power dissipation of 25W at case temperature, this MOSFET is suitable for demanding thermal environments. The TO-252AA surface mount package facilitates automated assembly. Key parameters include a gate charge (Qg) of 8.2 nC at 10V and input capacitance (Ciss) of 140 pF at 25V. The operating temperature range of -55°C to 150°C (TJ) ensures reliability across various industrial and consumer electronics applications, including power supplies and motor control.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 14 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.2A (Tc) |
| Rds On (Max) @ Id, Vgs | 2Ohm @ 1.3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 25W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 8.2 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 140 pF @ 25 V |
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