IRFR214TRPBF
MOSFET N-CH 250V 2.2A DPAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix MOSFET N-Channel, part number IRFR214TRPBF, is a surface-mount component designed for demanding applications. This N-Channel power MOSFET features a Drain-Source Voltage (Vdss) of 250V and a continuous Drain current (Id) of 2.2A at 25°C (Tc). The device offers a maximum on-resistance (Rds On) of 2 Ohms at 1.3A and 10V gate drive. With a gate charge (Qg) of 8.2 nC and input capacitance (Ciss) of 140 pF at 25V, it provides efficient switching characteristics. Power dissipation is rated at 2.5W (Ta) and 25W (Tc). The IRFR214TRPBF is housed in a TO-252-3, DPAK (2 Leads + Tab), SC-63 package, supplied on tape and reel. It operates across a temperature range of -55°C to 150°C. This component is suitable for use in industrial automation and power supply applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.2A (Tc) |
| Rds On (Max) @ Id, Vgs | 2Ohm @ 1.3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 25W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 8.2 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 140 pF @ 25 V |
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