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IRFR214TRLPBF

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IRFR214TRLPBF

MOSFET N-CH 250V 2.2A DPAK

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix IRFR214TRLPBF is an N-Channel Power MOSFET designed for demanding applications. This component features a Drain-Source Voltage (Vdss) of 250V and a continuous drain current (Id) of 2.2A at 25°C (Tc). The surface mountable DPAK package (TO-252-3) facilitates efficient thermal management, with a maximum power dissipation of 2.5W (Ta) and 25W (Tc). Key electrical characteristics include a maximum Rds On of 2 Ohms at 1.3A and 10V gate drive, and a gate charge (Qg) of 8.2 nC at 10V. Input capacitance (Ciss) is rated at 140 pF at 25V. The operating temperature range is -55°C to 150°C (TJ). This MOSFET is suitable for use in power supply, motor control, and industrial automation applications.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C2.2A (Tc)
Rds On (Max) @ Id, Vgs2Ohm @ 1.3A, 10V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageDPAK
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)250 V
Gate Charge (Qg) (Max) @ Vgs8.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds140 pF @ 25 V

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