IRFR214TR
MOSFET N-CH 250V 2.2A DPAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRFR214TR is an N-Channel Power MOSFET designed for efficient switching applications. This device features a maximum drain-source voltage (Vdss) of 250V and a continuous drain current (Id) of 2.2A at 25°C case temperature. With a low on-resistance (Rds On) of 2 Ohm maximum at 1.3A and 10V gate-source voltage, it minimizes conduction losses. The IRFR214TR offers a maximum power dissipation of 25W at 25°C case temperature and 2.5W at 25°C ambient temperature. Key parameters include a gate charge (Qg) of 8.2 nC maximum at 10V and an input capacitance (Ciss) of 140 pF maximum at 25V. The MOSFET is housed in a TO-252-3, DPAK (2 Leads + Tab), SC-63 surface-mount package, supplied on tape and reel. This component is suitable for use in power supply units, motor control, and industrial automation. It operates within a temperature range of -55°C to 150°C.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.2A (Tc) |
| Rds On (Max) @ Id, Vgs | 2Ohm @ 1.3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 25W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 8.2 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 140 pF @ 25 V |
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