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IRFR214TR

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IRFR214TR

MOSFET N-CH 250V 2.2A DPAK

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix IRFR214TR is an N-Channel Power MOSFET designed for efficient switching applications. This device features a maximum drain-source voltage (Vdss) of 250V and a continuous drain current (Id) of 2.2A at 25°C case temperature. With a low on-resistance (Rds On) of 2 Ohm maximum at 1.3A and 10V gate-source voltage, it minimizes conduction losses. The IRFR214TR offers a maximum power dissipation of 25W at 25°C case temperature and 2.5W at 25°C ambient temperature. Key parameters include a gate charge (Qg) of 8.2 nC maximum at 10V and an input capacitance (Ciss) of 140 pF maximum at 25V. The MOSFET is housed in a TO-252-3, DPAK (2 Leads + Tab), SC-63 surface-mount package, supplied on tape and reel. This component is suitable for use in power supply units, motor control, and industrial automation. It operates within a temperature range of -55°C to 150°C.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C2.2A (Tc)
Rds On (Max) @ Id, Vgs2Ohm @ 1.3A, 10V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageDPAK
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)250 V
Gate Charge (Qg) (Max) @ Vgs8.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds140 pF @ 25 V

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