IRFR214PBF-BE3
MOSFET N-CH 250V 2.2A DPAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix MOSFET N-Channel, part number IRFR214PBF-BE3. This device features a drain-to-source voltage (Vdss) of 250V and a continuous drain current (Id) of 2.2A at 25°C (Tc). The N-Channel MOSFET is packaged in a TO-252-3, DPAK (2 Leads + Tab), SC-63 for surface mount applications. Key electrical characteristics include a maximum on-resistance (Rds On) of 2 Ohms at 1.3A and 10V, and a gate charge (Qg) of 8.2 nC at 10V. Input capacitance (Ciss) is rated at a maximum of 140 pF at 25V. Power dissipation is 25W (Tc) and 2.5W (Ta). The operating temperature range is -55°C to 150°C (TJ). This component finds application in power supply switching and general-purpose switching circuits.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: Last Time BuyPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.2A (Tc) |
| Rds On (Max) @ Id, Vgs | 2Ohm @ 1.3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 25W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-252AA |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 8.2 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 140 pF @ 25 V |
Request a Quote
Clients Also Buy
SIJH5700E-T1-GE3
N-CHANNEL 150 V (D-S) 175C MOSFE
SIHA14N60E-GE3
N-CHANNEL 600V
IRL540S
MOSFET N-CH 100V 28A D2PAK
