IRFR214
MOSFET N-CH 250V 2.2A DPAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRFR214 is an N-Channel Power MOSFET designed for demanding applications. This component features a 250V drain-to-source breakdown voltage (Vdss) and a continuous drain current (Id) of 2.2A at 25°C (Tc). The IRFR214 offers a maximum on-resistance (Rds On) of 2Ohm at 1.3A and 10V Vgs. Key parameters include a gate charge (Qg) of 8.2 nC (max) at 10V and input capacitance (Ciss) of 140 pF (max) at 25V. With a maximum power dissipation of 25W (Tc) and 2.5W (Ta), this device is suitable for surface mount applications in a TO-252-3, DPAK (2 Leads + Tab), SC-63 package. Operating temperature range is from -55°C to 150°C (TJ), with a maximum gate-source voltage (Vgs) of ±20V. This MOSFET is utilized in power supplies, automotive systems, and industrial automation.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.2A (Tc) |
| Rds On (Max) @ Id, Vgs | 2Ohm @ 1.3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 25W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 8.2 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 140 pF @ 25 V |
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