IRFR210TRR
MOSFET N-CH 200V 2.6A DPAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRFR210TRR is a N-Channel Power MOSFET designed for efficient switching applications. This device features a Drain-to-Source Voltage (Vdss) of 200 V and a continuous Drain Current (Id) of 2.6 A at 25°C (Tc). With a low on-resistance (Rds On) of 1.5 Ohm maximum at 1.6 A and 10 Vgs, it minimizes conduction losses. The MOSFET is housed in a TO-252-3, DPAK (SC-63) surface mount package, suitable for high-density board designs. Key parameters include a maximum Gate Charge (Qg) of 8.2 nC at 10V and an input capacitance (Ciss) of 140 pF at 25V. Power dissipation capabilities are 2.5W (Ta) and 25W (Tc). The operating temperature range is -55°C to 150°C. This component is commonly utilized in power supply units, motor control, and general-purpose switching circuits across various industrial and consumer electronics sectors. The part is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.5Ohm @ 1.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 25W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 8.2 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 140 pF @ 25 V |
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