IRFR210
MOSFET N-CH 200V 2.6A DPAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRFR210 is an N-Channel Power MOSFET designed for demanding applications. This component features a drain-source voltage (Vdss) of 200V and a continuous drain current (Id) of 2.6A at 25°C (Tc). With a low on-resistance (Rds On) of 1.5 Ohm maximum at 1.6A and 10V Vgs, the IRFR210 minimizes conduction losses. The MOSFET offers low gate charge (Qg) of 8.2 nC maximum at 10V Vgs and input capacitance (Ciss) of 140 pF maximum at 25V Vds. Its surface mount DPAK (TO-252-3) package facilitates efficient thermal management, with a maximum power dissipation of 25W at 25°C (Tc). Operating temperature ranges from -55°C to 150°C (TJ). This device is suitable for use in power supplies, motor control, and industrial automation.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.5Ohm @ 1.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 25W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 8.2 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 140 pF @ 25 V |
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